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SiC Wafer




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Diameter 2", 3", 4"
Thickness 330/350/430 ?m±25 ?m
Micropipe Density ?10 c? ?30 c? ?100 c?
FWHM <30 arcsec <50arcsec n/a
Resitivity 4H-N 0.01-0.03 ?·cm 4H-N 0.01-0.1 ?·cm 4H-N 0.01-0.1 ?·cm
6H-N  0.02-0.1 ?·cm 6H-N  0.02-0.2 ?·cm 6H-N  0.02-0.2 ?·cm
6H-SI  (90%) >1E5 ?·cm 6H-SI  (80%) >1E5 ?·cm 6H-SI  (70%) >1E5 ?·cm
Crystal Orientation On axis:<0001>±0.5 Deg  Off axis:4.0 toward <1120>±0.5 Deg
Roughness Polish Ra?1 nm Polish Ra?1 nm n/a
CMP Ra?0.5 nm CMP Ra?0.5 nm n/a
TTV ?10?m ?10?m ?10?m
Bow/Warp  (?m) ?25?m ?25?m ?25?m
Usable Area  ?90%  ?80%  ?70%