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GaAs Wafer




Type/Dopant SI-Type/Carbon N-Type/Si Undoped P-Type/Zn
Growth Method VGF
Diameter 2", 3", 4"
Orientation (100)±0.5°
Thickness (µm) 2": 350±25um; 3" and 4": 625±25um
Mobility (cm2/V.S.) >1 × 103 (1-2.5) × 103 (3-5) × 103 50-100
Etch Pitch Density (cm2) 1500-5000 100-5000 1500-5000 3000-5000
TTV [P/P] (µm) <5
TTV [P/E] (µm) <10
Warp (µm) <10
Surface Finished P/P, P/E, E/E

Note: Other Specifications maybe available upon request