中文 / EN
Home > PRODUCT > Compound Semiconductors

InP Wafer




Type/Dopant SI-Type/Fe N-Type/S & Sn Undoped P-Type/Zn
Growth Method VGF
Diameter 2", 3", 4"
Orientation (100)±0.5°
Thickness (µm) 2": 350±25um; 3" and 4": 625±25um
Mobility (cm2/V.S.) >1 × 103 (1-2.5) × 103 (3-5) × 103 50-100
Etch Pitch Density (cm2) 1500-5000 100-5000 <5000 ? 500
TTV [P/P] (µm) <10
TTV [P/E] (µm) <15
Warp (µm) <20
Surface Finished P/P, P/E, E/E

Note: Other Specifications maybe available upon request