|Orientation||< 1-0-0 > , < 1-1-1 >|
|Type/Dopant||Intrinsic, N Type/Phos, P Type/Boron|
|Thickness Tolerance||Standard ± 25µm, Maximum Capabilities ± 5µm||± 20µm|
|Resistivity||1000-20000 Ohm-cm, Maximum Capabilities >20000 Ohm-cm and 1-5 Ohm-cm|
|Surface Finished||P/E , P/P, E/E, G/G|
|TTV (?m)||Standard < 10 um, Maximum Capabilities <5 um|
|Bow/Warp (?m)||Standard <40 um, Maximum Capabilities <20 um||<40?m|
Float Zone Silicon
The Float Zone (FZ) Method produces a highly pure form of silicon.
The purity of the material allows for lower defect concentrations and higher resistivity levels and it is useful in high-power devices, detectors and solar applications.
PLUTO offers the very best Float Zone material commercially available, not made from CZ re- melts but from high-quality polysilicon, thus allowing for resistivity’s in excess of 10k ohm–cm.
PLUTO is the exclusive China distributor, bringing world-class Float Zone silicon to the world market since 2010.
Available in various specifications and Diameters up to 200mm.
Doped (NTD) Float Zone silicon:
The lowest resistivity variation of any crystalline silicon product on the market. NTD silicon products in the widest range of resistivities ranging from 5 ?cm to 4000 ?cm.