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FZ Wafer



Diameter 2"  3"  4"  5"  6"  8" 
Growth Method FZ
Orientation  < 1-0-0 > , < 1-1-1 > 
Type/Dopant Intrinsic, N Type/Phos, P Type/Boron
Thickness (?m) 180-1500 200-1500 200-1500 200-1100 200-1100 725
Thickness Tolerance Standard ± 25µm, Maximum Capabilities ± 5µm ± 20µm
Resistivity  1000-20000 Ohm-cm, Maximum Capabilities >20000 Ohm-cm and 1-5 Ohm-cm
Surface Finished P/E , P/P, E/E, G/G
TTV (?m) Standard < 10 um, Maximum Capabilities <5 um
Bow/Warp  (?m) Standard <40 um,  Maximum Capabilities <20 um <40?m
Particle <10,@0.5?m <10,@0.3?m <10,@0.3?m <10,@0.3?m <10,@0.3?m <10,@0.3?m



Float Zone Silicon

The Float Zone (FZ) Method produces a highly pure form of silicon.

The purity of the material allows for lower defect concentrations and higher resistivity levels and it is useful in high-power devices, detectors and solar applications.

PLUTO offers the very best Float Zone material commercially available, not made from CZ re- melts but from high-quality polysilicon, thus allowing for resistivity’s in excess of 10k ohm–cm.


PLUTO is the exclusive China distributor, bringing world-class Float Zone silicon to the world market since 2010.

Available in various specifications and Diameters up to 200mm.

Neutron Transmutation Doped (NTD) Float Zone silicon:
The lowest resistivity variation of any crystalline silicon product on the market. NTD silicon products in the widest range of resistivities ranging from 5 ?cm to 4000 ?cm.