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SOI Wafer



Silicon on Insulator (SOI) technology refers to the use of a layered silicon–insulator–silicon substrate in place of conventional silicon substrates in semiconductor manufacturing, especially microelectronics, to reduce parasitic device capacitance, thereby improving performance. SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or sapphire (these types of devices are called silicon on sapphire, or SOS). The choice of insulator depends largely on intended application, with sapphire being used for high-performance radio frequency (RF) and radiation-sensitive applications, and silicon dioxide for diminished short channel effects in microelectronics devices. The insulating layer and topmost silicon layer also vary widely with application. 



Diameter 4"  5"  6"  8" 
Device Layer Dopant Boron, Phos, Arsenic, Antimony, Undoped
Orientation  <100>, <111>
Type SIMOX, BESOI, Simbond, Smart-cut
Resistivity  0.001-20000 Ohm-cm
Thickness (?m) 0.2-150
The Uniformity ?5%
BOX Layer Thickness (?m) 0.4-3
Uniformity ?2.5%
Substrate Orientation  <100>, <111>
Type/Dopant P Type/Boron , N Type/Phos,  N Type/As, N Type/Sb
Thickness (?m) 300-725
Resistivity  0.001-20000 Ohm-cm
Surface Finished P/P, P/E
Particle <10@.0.3um



Silicon on Insulator


Silicon on Insulator (SOI) is a technology that bonds an active wafer to a handle wafer with an oxide layer in between.


PLUTO offers a wide range of SOI products, suitable for a variety of applications.


Silicon on Insulator is commonly used in MEMS, Automotive and applications where high temperature tolerance and high noise immunity are key requirements.


Silicon on Insulator wafers are composed of a three-layer material stack: Active layer of prime quality silicon (DEVICE LAYER) over a buried layer(BOX) of electrically insulating silicon dioxide, over a bulk silicon support wafer (HANDLE).