| Type/Dopant 导电类型/掺杂元素 | Semi-Insulated | P-Type/Zn | N-Type/Si | N-Type/Si |
| Application 应用 | Micro Eletronic | LED | Laser Diode | |
| Growth Method 长晶方式 | VGF | |||
| Diameter 直径 | 2", 3", 4", 6" | |||
| Orientation 晶向 | (100)±0.5° | |||
| Thickness 厚度 (µm) | 350-625um±25um | |||
| OF/IF 参考边 | US EJ or Notch | |||
| Carrier Concentration 载流子浓度 | - | (0.5-5)*1019 | (0.4-4)*1018 | (0.4-0.25)*1018 |
| Resistivity 电阻率 (ohm-cm) | >107 | (1.2-9.9)*10-3 | (1.2-9.9)*10-3 | (1.2-9.9)*10-3 |
| Mobility 电子迁移率 (cm2/V.S.) | >4000 | 50-120 | >1000 | >1500 |
| Etch Pitch Density 位错密度(/cm2) | <5000 | <5000 | <5000 | <500 |
| TTV 平整度 [P/P] (µm) | <5 | |||
| TTV 平整度 [P/E] (µm) | <10 | |||
| Warp 翘曲度 (µm) | <10 | |||
| Surface Finished 表面加工 | P/P, P/E, E/E | |||
