| GaN/ Al₂O₃ Substrates (4") 4英寸氮化镓复合衬底 | |||
| Item 产品型号 | Un-doped | N-type | High-doped N-type |
| Size 尺寸 (mm) | Φ100.0±0.5 (4") | ||
| Substrate Structure衬底结构 | GaN on Sapphire(0001) | ||
| SurfaceFinished 表面处理 | (Standard: SSP Option: DSP) | ||
| Thickness 厚度(μm) | 4.5±0.5; 20±2;Customized | ||
| Conduction Type 导电类型 | Un-doped | N-type | High-doped N-type |
| Resistivity 电阻率 (Ω·cm）(300K) | ≤0.5 | ≤0.05 | ≤0.01 |
| GaN Thickness Uniformity GaN厚度不均匀性 |
≤±10% (4") | ||
| Dislocation Density (cm-2) 位错密度 |
≤5×108 | ||
| 有效面积 Useable Surface Area | ＞90% | ||
| Package 包装 | Packaged in a class 100 clean room environment. | ||
