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化合物半导体
钽酸锂(LT)
钽酸锂(LiTaO3)晶体是一种优良的多功能材料,具有很高的应用价值。LiTaO3晶体以它的化学性能稳定高(不溶与水),居里点高于600℃,不易出现退极化现象,介电损耗低,探测率优值高的优良特性,成为热释电红外探测器应用材料的最佳选择。经过抛光的LT晶片广泛用于谐振器、滤波器、换能器等电子通讯器件的制造,尤其以它良好的机电耦合、温度系数等综合性能而被用于制造高频声表面波器件,并应用在手机、对讲机、卫星通讯、航空航天等许多高端通讯领域。
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商品详情
Fe doped LT Wafers
 
Parameter Specification
Material LiTaO3 wafers(White or Black &Fe doped)
Diameter 3inch/4inch/6inch
Diameter Tolerance ±0.03mm
Curie Temp 603±2℃
Cutting Angle X/Y/Z/X112Y/Y36/Y42/Y48/etc
Tol(±) <0.20 mm 
Thickness 0.18 ~ 0.5mm or more
Primary Flat 22mm /32mm /42.5mm /57.5mm
LTV (5mmx5mm) <1µm
TTV <3µm
BOW -30
WARP <40µm
PLTV(<0.5um) ≥95%(5mm*5mm)
Orientation Flat All available
Surface Type Single Side Polished(SSP) /Double Sides   Polished(DSP)
Polished side Ra <0.5nm
Back Side Criteria General is 0.2-0.5µm or as customized
Edge Criteria R=0.2mm or Bullnose
Fe doped Fe doped for saw grade LN< wafers
Wafer Surface Criteria Transmissivity       general:5.9x10-11-10 at 25℃
Contamination       None
Particles @>0.3 µm  ≤30
Scratch , Chipping   None
Defect              No edge cracks, scratches, saw marks, stains
Packing 25pcs per box

Optical Grade Lithium Tantalate Wafers

Parameter Specification
Material LiTaO3 wafers(White or Black)
Diameter 2inch/3inch/4inch
Diameter Tolerance ±0.03mm
Curie Temp 603±2℃
Cutting Angle X/Y/Z etc.
Tol(±) <0.20 mm 
Thickness 0.18 ~ 0.5mm or more
Primary Flat 16mm/22mm /32mm
TTV <3µm
BOW -30
WARP <40µm
Surface Type Single Side Polished(SSP) /Double Sides   Polished(DSP)
Polished side Ra <0.5nm
Back Side Criteria General is 0.2-0.5µm or as customized
Edge Criteria R=0.2mm or Bullnose
Optical doped Zn/MgO etc.
Wafer Surface Criteria Contamination       None
Particles @>0.3 µm  ≤30
Scratch , Chipping   None
Defect              No edge cracks, scratches, saw marks, stains
Packing 25pcs per box

SAW Grade Lithium Tantalate Wafers

Parameter Specification
Material LiTaO3 wafers
Diameter 3inch/4inch/6inch
Diameter Tolerance ±0.03mm
Curie Temp 603±2℃
Cutting Angle X/Y/Z/X112Y/Y36/Y42/Y48/etc.
Tol(±) <0.20 mm 
Thickness 0.18 ~ 0.5mm or more
Primary Flat 22mm /32mm /42.5mm /57.5mm
LTV (5mmx5mm) <1µm
TTV <3µm
BOW -30
WARP <40µm
PLTV(<0.5um) ≥95%(5mm*5mm)
Orientation Flat All available
Surface Type Single Side Polished(SSP) /Double Sides Polished(DSP)
Polished side Ra <0.5nm
Back Side Criteria General is 0.2-0.5µm or as customized
Edge Criteria R=0.2mm or Bullnose
Wafer Surface Criteria Transmissivity       general:5.9x10-11-10 at 25℃
Contamination       None
Particles @>0.3 µm  ≤30
Scratch , Chipping   None
Defect              No edge cracks, scratches, saw marks, stains
Packing 25pcs per box

Sub 1: PlutoChip Co., Ltd    -Discrete Devices and Integrated Circuits-    www.plutochip.com
Sub 2: PlutoSilica Co., Ltd   -Silicon Wafer and Glass Wafer Manufactory-
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